GSC Architects

Samsung Austin Semiconductor - FAB X Project
Austin, Texas

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The FAB X Project expanded the capacity of the existing Dynamic Random Access Memory (DRAM) chip manufacturing facility. The form of the building is derived directly from the processes that occur within. However, the industrial aesthetic was softened considerably with finishes and colors throughout the factory; care was taken to ensure the comfort of the human occupants while not interfering with the tasks of the robotic equipment.

This project highlights the importance of a strong relationship between client, design team, and contractor. The entire facility was conceived of and finished out in 10 months, a full 2 months ahead of schedule. Close co-ordination between all disciplines helped confront potential problems before they even came to fruition.

With this expansion of the chip fabrication facility, the family of Samsung employees at the campus was allowed to grow exponentially yet not overwhelm the existing infrastructure. Machine-free zones allow the workers to navigate the building freely and safely without interference to the steady pace of production.

GSC Services Provided: Planning/Programming, Architectural Design, Construction Administration

Size:  135,000 sf